Publications associées à Valleytronics

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalc ...

Royal Society of Chemistry2023

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

Oleg Yazyev, Michele Pizzochero, Kristians Cernevics

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missin ...

AMER CHEMICAL SOC2021

Electronic, excitonic and magnetic properties of two-dimensional heterostructures

Alberto Ciarrocchi

Two-dimensional (2D) crystals such as graphene or transition metal dichalcogenides (TMDCs) are a fascinating class of quantum materials. These compounds are obtained isolating the single atomic sheets that normally form bulk layered crystals, and the reduc ...

EPFL2020

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Oleg Yazyev, Artem Pulkin

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy stud ...

Springer2019

Semiconducting van der Waals Interfaces as Artificial Semiconductors

Helmuth Berger, Evgeniy Ponomarev

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to unde ...

2018

Resolving the spin splitting in the conduction band of monolayer MoS2

Andras Kis, Ahmet Avsar, Kolyo Marinov

Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is n ...

Nature Publishing Group2017

Valley-polarized massive charge carriers in gapped graphene

Klaus Kern, Marko Burghard, Eva Carmen Peters

The lifting of the fourfold degeneracy of the zeroth Landau level in graphene under high magnetic fields has been the subject of numerous experimental studies, and attributed to various mechanisms such as pure spin splitting, spin splitting combined with s ...

Amer Physical Soc2013

Charge transport gap in graphene antidot lattices

Klaus Kern, Marko Burghard, Eva Carmen Peters

Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene. Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene ...

Amer Physical Soc2012