Concept

Valleytronics

Related publications (16)

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalc ...

ROYAL SOC CHEMISTRY2023

Edge Disorder in Bottom-Up Zigzag Graphene Nanoribbons: Implications for Magnetism and Quantum Electronic Transport

Oleg Yazyev, Kristians Cernevics, Michele Pizzochero

We unveil the nature of the structural disorder in bottom-up zigzag graphene nanoribbons along with its effect on the magnetism and electronic transport on the basis of scanning probe microscopies and first-principles calculations. We find that edge-missin ...

AMER CHEMICAL SOC2021

Electronic, excitonic and magnetic properties of two-dimensional heterostructures

Alberto Ciarrocchi

Two-dimensional (2D) crystals such as graphene or transition metal dichalcogenides (TMDCs) are a fascinating class of quantum materials. These compounds are obtained isolating the single atomic sheets that normally form bulk layered crystals, and the reduc ...

EPFL2020

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Oleg Yazyev, Artem Pulkin

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy stud ...

Springer2019

Semiconducting van der Waals Interfaces as Artificial Semiconductors

Helmuth Berger, Evgeniy Ponomarev

Recent technical progress demonstrates the possibility of stacking together virtually any combination of atomically thin crystals of van der Waals bonded compounds to form new types of heterostructures and interfaces. As a result, there is the need to unde ...

2018

Resolving the spin splitting in the conduction band of monolayer MoS2

Andras Kis, Ahmet Avsar, Kolyo Marinov

Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is n ...

Nature Publishing Group2017

Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 heterostructures

Andras Kis, Dumitru Dumcenco, Yen-Cheng Kung, Alessandro Surrente

Monolayer transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDCs. In this work, we show that the optical quality of CVD-grown MoSe2 is completely r ...

American Chemical Society2017

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

Artem Pulkin

The thesis describes the computational study of structural, electonic and transport properties of monolayer transition metal dichalcogenides (TMDs) in the stable 2H and the metastable 1T' phases. Several aspects have been covered by the study including the ...

EPFL2017

Optoelectronic Devices Based on Monolayer Transition Metal Dichalcogenides

Oriol López Sánchez

Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...

EPFL2016

Optically active quantum dots in monolayer WSe2

Andras Kis, Adrien Victor Allain, Dominik Sebastian Lembke, Meinrad Sidler

Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons(1-3). In the meantime, transi ...

Nature Publishing Group2015

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