Concept

Photodiode

Publications associées (530)

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Nonlinear optical diode effect in a magnetic Weyl semimetal

Philip Johannes Walter Moll, Chunyu Guo, Hao Yang

Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically co ...

Nature Portfolio2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Piscataway2024

On-Chip Fully Reconfigurable Artificial Neural Network in 16 nm FinFET for Positron Emission Tomography

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Andrada Alexandra Muntean

Smarty is a fully-reconfigurable on-chip feed-forward artificial neural network (ANN) with ten integrated time-to-digital converters (TDCs) designed in a 16 nm FinFET CMOS technology node. The integration of TDCs together with an ANN aims to reduce system ...

Piscataway2024

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Jiaming Ma

This dataset accompanies the publication "Best practices in measuring absorption at the macro- and microscale" published in APL Photonics. The data can be used to reproduce original plots in figures 1-4 in the main text and all original plots in the suppor ...

Zenodo2024

Demonstration of particle tracking with scintillating fibres read out by a SPAD array sensor and application as a neutrino active target

Edoardo Charbon, Claudio Bruschini, Paul Mos, Kodai Kaneyasu, Michael Alan Wayne

Scintillating fibre detectors combine sub-mm resolution particle tracking, precise measurements of the particle stopping power and sub-ns time resolution. Typically, fibres are read out with silicon photomultipliers (SiPM). Hence, if fibres with a few hund ...

New York2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

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