Publications associées à Épitaxie

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Gabriel Aeppli, Nicolò D'Anna

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Jeremy Luterbacher, Songlan Sun, Farzaneh Talebkeikhah

Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

WILEY-V C H VERLAG GMBH2023

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

Stefano Mischler, Patrik Schmutz, Anna Neus Igual Muñoz, Roland Hauert

Passive films on the superaustenitic stainless steel 1.4652 were studied using angular resolved hard X-ray photo-electron spectroscopy (HAXPES), which provides an increased information depth compared to conventional X-ray photo-electron spectroscopy (XPS). ...

Hoboken2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Ion-Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Shaik Mohammed Zakeeruddin, Haizhou Lu, Jie Chen, Xiaoyan Wang, Di Zhang, Ziyun Wang, Meng Li, Xingyu Gao

Metal halide perovskites are ideal candidates for indoor photovoltaics (IPVs) because of their easy-to-adjust bandgaps, which can be designed to cover the spectrum of any artificial light source. However, the serious non-radiative carrier recombination und ...

WILEY-V C H VERLAG GMBH2023

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Kumar Varoon Agrawal, Jian Hao, Shuqing Song, Luis Francisco Villalobos Vazquez de la Parra, Shaoxian Li, Deepu Joseph Babu, Heng-Yu Chi, Qi Liu, Yu Han

Zeolitic imidazolate frameworks (ZIFs) are a subset of metal-organic frameworks with more than 200 characterized crystalline and amorphous networks made of divalent transition metal centres (for example, Zn2+ and Co2+) linked by imidazolate linkers. ZIF th ...

NATURE PORTFOLIO2023

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

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Épitaxie

GeSn as next-generation material for short-wave infrared single-photon detection

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Ion-Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Unit-cell-thick zeolitic imidazolate framework films for membrane application

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

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Chattez avec Graph Search

GeSn as next-generation material for short-wave infrared single-photon detection

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Ion-Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics