Publications associées à Épitaxie par jet moléculaire

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli, Davide Colleoni

Using density functional calculations, we study a set of candidate defects for Fermi-level pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and interfacial defects, including As antisites, Ga and As dangling bonds, th ...

American Physical Society2015

Polarization response of nanowires a la carte

Anna Fontcuberta i Morral, Esther Alarcon Llado, Alberto Casadei, Martin Heiss, Eleonora Russo, Francesca Amaduzzi

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Nature Publishing Group2015

The ethanol sensors made from alpha-Fe2O3 decorated with multiwall carbon nanotubes

László Forró, Klara Hernadi

Thin film ethanol sensors made from alpha-Fe2O3 decorated with multiwall carbon nanotubes (MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated alpha-Fe2O3/MWCNTs (25:1 weight ratios) nanocomposite powder was in ...

Techno-Press2015

Carbon nanotube film replacing silver in high-efficiency solid-state dye solar cells employing polymer hole conductor

Nikolaos Vlachopoulos, Ulf Anders Hagfeldt, Jiahuan Zhang

A semitransparent, flexible single-walled carbon nanotube (SWCNT) film was efficiently used in place of evaporated silver as the counter electrode of a poly(3,4-ethylenedioxythiophene) polymer-based solid-state dye solar cell (SSDSC): the solar-to-electric ...

Springer Verlag2015

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Sonia Conesa Boj

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

American Chemical Society2014

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the n ...

American Institute of Physics2014

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Luca Francaviglia, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Gwénolé Jean Jacopin

We report on the mixed photovoltaic/photoconductive operation mode of a visible blind photodetector based on GaN nanowires containing a p-i-n junction. The photodetector operates as a photovoltaic device close to zero bias and exhibits a photoconductive ga ...

Amer Inst Physics2014

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

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Épitaxie par jet moléculaire

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Polarization response of nanowires a la carte

The ethanol sensors made from alpha-Fe2O3 decorated with multiwall carbon nanotubes

Carbon nanotube film replacing silver in high-efficiency solid-state dye solar cells employing polymer hole conductor

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Graph Chatbot

Chattez avec Graph Search

Polarization response of nanowires a la carte

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Carbon nanotube film replacing silver in high-efficiency solid-state dye solar cells employing polymer hole conductor

The ethanol sensors made from alpha-Fe2O3 decorated with multiwall carbon nanotubes

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature