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Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...
ESP particle collector (1) for collecting particles in a particle containing gas stream, comprising an inlet section (4), a collector section (6), and an electrode arrangement (8), the inlet section comprising a flow tube (10) defining a gas flow channel ( ...
The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...
In this paper we demonstrate ultra-high sensitivity silicon nanowires pH and protein sensing on the same Silicon nanowire array platform by using a constant current method and monitoring the drain voltage as function of analyte concentration. The injected ...
Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...
Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves ourlives in many aspects, but comes with several challenges related to the technology deployment atlarge scales. Handling ever growing amounts of information t ...
Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...
Currently, the full potential of perovskite solar cells (PSCs) is limited by chargecarrier recombination owing to imperfect passivation methods. Here, the recombination loss mechanisms owing to the interfacial energy offset and defects are quantified. The ...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
The growing field of pulsed electron microscopy (PEM) currently suffers from technical challenges, many of which are related to the inefficiency of present pulsed emitters. In this research, we explore semiconductor photoemitters as a replacement of conven ...
