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Publications associées (878)

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Active microrheology in corrugated channels: Comparison of thermal and colloidal baths

Ignacio Pagonabarraga Mora

Hypothesis: The dynamics of colloidal suspension confined within porous materials strongly differs from that in the bulk. In particular, within porous materials, the presence of boundaries with complex shapes entangles the longitudinal and transverse degre ...

ACADEMIC PRESS INC ELSEVIER SCIENCE2022

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

The fabrication of metallic nanostructures on stretchable substrates enables specific applications that exploit the combination of the nano-scale phenomena and the mechanical tunability of the physical dimensions of the nanostructures. Due to the large dif ...

EPFL2022

Understanding Wavelength-Dependent Synergies between Morphology and Photonic Design in TiO2-Based Solar Powered Redox Cells

Giulia Tagliabue, Jiaming Ma, Kiseok Oh

Solar powered redox cells (SPRCs) are promising for large-scale and long-term storage of solar-energy, particularly when coupled with redox flow batteries (RFBs). While efforts have primarily focused on heterostructure engineering, the potential of synergi ...

AMER CHEMICAL SOC2022

Long Spin Lifetime in Rare-Earth Single-Atom Magnets at Surfaces

Boris Sorokin

Further miniaturisation of magnetic storage devices requires an advent of new types of magnets, since classical ferromagnetic materials show lack of remanence at nano- and subnanoscale. A single atom can represent the smallest possible bit of information. ...

EPFL2022

Generation of Human iPSC-Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Anna Fontcuberta i Morral, Wonjong Kim

Nanowire (NW) arrays interfaced with biological cells have been demonstrated to be potent tools for advanced applications such as sensing, stimulation, or drug delivery. Many implementations, however, have so far only been studied with rather robust basic ...

WILEY2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Mukeshchand Thakur, Michal Daniel Macha, Yanfei Zhao, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

Gradient Heating Epitaxial Growth Gives Well Lattice-Matched Mo2C-Mo2N Heterointerfaces that Boost Both Electrocatalytic Hydrogen Evolution and Water Vapor Splitting

Bowen Yang, Mei Wang, Peng Guo

An optimized approach to producing lattice-matched heterointerfaces for electrocatalytic hydrogen evolution has not yet been reported. Herein, we present the synthesis of lattice-matched Mo2C-Mo2N heterostructures using a gradient heating epitaxial growth ...

WILEY-V C H VERLAG GMBH2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Elif Nur Dayi, Martin George Friedl, Vladimir Dubrovskii, Nicholas Paul Morgan, Akshay Balgarkashi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

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