Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi
In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...
Institute of Electrical and Electronics Engineers2011