Publications associées à General protection fault

Midas: Systematic Kernel TOCTTOU Protection

Mathias Josef Payer, Atri Bhattacharyya, Uros Tesic

Double-fetch bugs are a plague across all major operating system kernels. They occur when data is fetched twice across the user/kernel trust boundary while allowing concurrent modification. Such bugs enable an attacker to illegally access memory, cause den ...

2022

Rethinking Software Runtimes for Disaggregated Memory

Sanidhya Kashyap, Ivan Puddu

Disaggregated memory can address resource provisioning inefficiencies in current datacenters. Multiple software runtimes for disaggregated memory have been proposed in an attempt to make disaggregated memory practical. These systems rely on the virtual mem ...

ASSOC COMPUTING MACHINERY2021

Bifurcations at the Stability Transition of Earthquake Faulting

Carolina Giorgetti

Tectonic faults typically break in a single rupture mode within the range of styles from slow slip to dynamic earthquake failure. However, in increasingly well-documented instances, the same fault segment fails in both slow and fast modes within a short pe ...

AMER GEOPHYSICAL UNION2020

Time reversal applied to fault location in power networks: Pilot test results and analyses

Mario Paolone, Zhaoyang Wang, Reza Razzaghi

This paper presents the results of a pilot test performed on a real medium voltage distribution network in Switzerland with the aim of assessing the performance of a fault location system relying on the Electromagnetic Time Reversal (EMTR) method. To the b ...

2020

SoK: Shining Light on Shadow Stacks

Mathias Josef Payer, Xiangyu Zhang

Control-Flow Hijacking attacks are the dominant attack vector against C/C++ programs. Control-Flow Integrity (CFI) solutions mitigate these attacks on the forward edge, i.e., indirect calls through function pointers and virtual calls. Protecting the backwa ...

IEEE COMPUTER SOC2019

Axo: Detection and Recovery for Delay and Crash Faults in Real-Time Control Systems

Jean-Yves Le Boudec, Simon Bliudze, Wajeb Saab

Real-time control systems use controllers that compute and issue setpoints within stringent delay constraints. Failure to do so, due to a crash or delay as a result of software and/or hardware faults, can cause failure of the controlled resources. Recently ...

2018

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Munehito Kagaya

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

2011

Efficient Cache Attacks on AES, and Countermeasures

Dag Arne Osvik

We describe several software side-channel attacks based on inter-process leakage through the state of the CPU's memory cache. This leakage reveals memory access patterns, which can be used for cryptanalysis of cryptographic primitives that employ data-depe ...

Springer Verlag2010

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Jelena Ristic

We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” formalism, of energies and envelope functions of electrons submitted to ...

2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jacques Levrat, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir, Tiankai Zhu, Jelena Ristic

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009