Electrical resistance and conductance

The electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (Ω), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ℧). The resistance of an object depends in large part on the material it is made of. Objects made of electrical insulators like rubber tend to have very high resistance and low conductance, while objects made of electrical conductors like metals tend to have very low resistance and high conductance. This relationship is quantified by resistivity or conductivity. The nature of a material is not the only factor in resistance and conductance, however; it also depends on the size and shape of an object because these properties are extensive rather than intensive. F

Perspective on training fully connected networks with resistive memories: Device requirements for multiple conductances of varying significance

Giorgio Cristiano, Massimo Giordano

Novel Deep Neural Network (DNN) accelerators based on crossbar arrays of non-volatile memories (NVMs)-such as Phase-Change Memory or Resistive Memory-can implement multiply-accumulate operations in a highly parallelized fashion. In such systems, computation occurs in the analog domain at the location of weight data encoded into the conductances of the NVM devices. This allows DNN training of fully-connected layers to be performed faster and with less energy. Using a mixed-hardware-software experiment, we recently showed that by encoding each weight into four distinct physical devices-a "Most Significant Conductance" pair (MSP) and a "Least Significant Conductance" pair (LSP)-we can train DNNs to software-equivalent accuracy despite the imperfections of real analog memory devices. We surmised that, by dividing the task of updating and maintaining weight values between the two conductance pairs, this approach should significantly relax the otherwise quite stringent device requirements. In this paper, we quantify these relaxed requirements for analog memory devices exhibiting a saturating conductance response, assuming either an immediate or a delayed steep initial slope in conductance change. We discuss requirements on the LSP imposed by the "Open Loop Tuning" performed after each training example and on the MSP due to the "Closed Loop Tuning" performed periodically for weight transfer between the conductance pairs. Using simulations to evaluate the final generalization accuracy of a trained four-neuronlayer fully-connected network, we quantify the required dynamic range (as controlled by the size of the steep initial jump), the tolerable device-to-device variability in both maximum conductance and maximum conductance change, the tolerable pulse-to-pulse variability in conductance change, and the tolerable device yield, for both the LSP and MSP devices. We also investigate various Closed Loop Tuning strategies and describe the impact of the MSP/LSP approach on device endurance. Published by AIP Publishing.

2018

Magnetization Reversal Dynamics in Ferromagnetic Semiconductors

Liza Herrera Diez

This thesis is dedicated to the study of the magnetization reversal dynamics in compressively strained (Ga,Mn)As and differently functionalized (Ga,Mn)As materials. In the first part the domain wall dynamics of pure (Ga,Mn)As/GaAs materials is in the focus. The changes in the magnetic anisotropy energy landscape occurring as a function of temperature are monitored in detail by different experimental techniques. These measurements provide the necessary information for the identification of the temperature ranges corresponding to different magnetic anisotropy regimes. Knowing the biaxial anisotropy and uniaxial anisotropy dominated regimes the dependence of the domain wall dynamics on the magnetic anisotropy landscape is studied. Critical changes in domain wall alignment observed by Kerr microscopy are found upon changing from biaxial to uniaxial anisotropy. These changes could be partially attributed to the tendency of the system to minimize magnetic free poles at the domain boundaries. To complement the space resolved studies of the magnetization reversal, magnetic time relaxation effects are addressed. In particular the magnetic aftereffect in (Ga,Mn)As/GaAs is studied in detail. The irreversible aftereffect is evidenced as a critical reduction of the domain wall velocity with time under a constant applied magnetic field below coercivity. This time relaxation is tracked as a function of both time and magnetic field. The measurements show that the overall relaxation is composed of two relaxation processes acting in parallel at short and long time scales. By fitting these experimental results the values of the relaxation times of both relaxation processes were obtained. By this modeling also the values of the activation volumes for two independent (Ga,Mn)As materials are estimated. In the second part of this thesis the possibilities of tuning the electrical and magnetic properties of (Ga,Mn)As by volume and surface treatments are explored. As for the volume modification, oxygen species were incorporated into the (Ga,Mn)As films by means of exposure to an oxygen plasma. The incorporation of oxygen was evidenced by depth profile X-ray photoelectron spectroscopy. This treatment is found to weaken the ferromagnetism, visible as a reduction in the Curie temperature, and to hinder the electrical transport evidenced as an increase in the electrical resistance. In agreement with theories accounting for the hole mediated ferromagnetism in (Ga,Mn)As this behaviour was related to a hole compensation mechanism arising from the presence of oxygen impurities sitting in interstitial positions of the (Ga,Mn)As Zinc blende structure. In the last part, the modulation of the electrical and magnetic properties via surface functionalization is presented. The effects produced by the adsorption of molecular species on (Ga,Mn)As are similar to those found after oxygenation, namely a strong weakening of the magnetic properties and an increase in the values of the electrical resistance. However, in this case the distinctive feature is provided by the possibility of regulating the hole quenching effect by exploiting the additional degree of freedom provided by the chemical properties of the adsorbates. The adsorbate chosen for these experiments are dye molecules that absorb light in the visible range, in this way allowing for a light modulated interaction with the substrate. Using this concept is was possible to observe a modulation of the ferromagnetic transition temperature, the coercive field and the electrical resistance upon illumination. These observations provide a proof of principle for the realization of photo-sensitized (Ga,Mn)As devices where the magnetic properties can be regulated by light.

EPFL2011

Nano-electromechanical systems based on ultra-thin semiconductors

Sajedeh Manzeli

Nowadays, the interest in 2D materials has gone far beyond graphene. Specially, monolayers of transition metal dichalcogenides (TMDs) offer a broad spectrum of electronic and optical properties, and show the potential to revolutionize the electronics industry. The promising electronic properties of 2D semiconductors combined with their mechanical strength and flexibility, makes them ideal candidates for nanoelectromechanical systems (NEMS). This thesis focuses on realizing NEMS based on graphene and MoS2, which is one of the most appealing TMDs. First, we present the realization of graphene NEMS by fabricating single and bilayer graphene transistors featuring a doubly clamped suspended channel. The electromechanical response of monolayer graphene nanoribbons show a strain-induced increase in their electrical resistance, making it possible to estimate an upper limit for the piezoresistive gauge factor. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. Our numerical simulations indicate that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of the two graphene layers with respect to each other. Our results report on the rare observation of room temperature electronic interference in bilayer graphene. Next, we investigate the static electromechanical response of atomically thin MoS2. MoS2 exhibits high youngâs modulus and fracture strength. Furthermore, the bandgap of MoS2 is highly strain-tunable. This coupling between electrical and mechanical properties makes MoS2 a promising material for NEMS. Here we incorporate monolayer, bilayer and trilayer MoS2 in a suspended membrane configuration with the electrodes acting as mechanical clamps. Strain-induced bandgap tuning is detected via electrical conductivity measurements and the emergence of the piezoresistive effect in MoS2 is demonstrated. We observe a reversible bandgap modulation in atomically thin MoS2 membranes with a thickness dependent modulation rate. Finite element method (FEM) simulations are used to obtain the spatially varying bandgap profile on the membrane and to quantify the rate of bandgap change. The piezoresistive gauge factor is calculated for single layer, bilayer and trilayer MoS2. Our results reveal that monolayer and bilayer MoS2 show a piezoresistive effect which is comparable to the state-of-the-art silicon strain sensors and two orders of magnitude higher than in graphene. Finally, we present the investigation of MoS2 NEMS resonators working in the VHF range and featuring piezoresistive transduction. The atomic thickness of monolayer MoS2 places it as a promising candidate for miniaturization of electromechanical devices to the limits of vertical scaling. While the small mass of MoS2 leads to an increased resonant frequency and a higher mass sensitivity, the presence of piezoresistivity offers a transduction mechanism in addition to the traditional capacitive transduction. Operating in the tension-dominated regime, monolayer MoS2 NEMS resonators not only allow tunability of the resonant frequency using an external voltage, but also show the strain-induced enhancement of their dynamic range. Furthermore, the resonators are driven into the nonlinear regime allowing the study of nonlinear effects. This work sheds light on the potential of TMD based NEMS as ultra-low power switches, sensors and resonators for applications in RF range.

EPFL2018