NXP Semiconductors | EPFL Graph Search

Le siège de l'entreprise à Eindhoven|vignette NXP est un fabricant de semi-conducteurs, fondé en 1967 sous le nom de Philips. Elle est issue d'une scission de la division semi-conducteurs de Philips. C’est la dixième plus grande entreprise mondiale en termes de ventes dans le domaine des semi-conducteurs. Histoire En , Frans van Houten, le PDG de Philips Semiconductors a annoncé l'intention de Philips de se séparer de sa division semi-conducteurs soit en créant une spin-off (comme le fit en son temps Siemens avec Infineon) soit en la vendant à un autre groupe de semi-conducteurs. Le , Frans van Houten annonce que 80,1 % de Philips Semiconductors est vendu à un groupe d'investisseurs privés américain (Kholberg Kravis Roberts (KKR), Silver Lake Partners et AlpInvest Partners NV), Philips gardant les 19,9 % restants. Le , Frans van Houten annonce que la nouvelle société s'appelle NXP. Le nom NXP fait référence au slogan Consumer Next Experience ainsi qu'à la plateforme m

Convertisseurs multiniveaux asymétriques alimentés par transformateurs multi-secondaires basse-fréquence

Joseph Song Manguelle

In the last years, static power converters have become widely used in various applications. They can be found in domestic applications, railways, urban and ship transport, and even in several industrial systems. Some of these applications require a high or medium voltage power supply that is easily adjustable while providing good spectral performances. To overcome the maximum blocking voltage limits of the main power switches, multilevel techniques and other new power conversion topologies have been developed. They are series/parallel associations of existing power semiconductors, and allow generating an output voltage with many levels. The number of power semiconductors needed in these topologies increases as the number of levels increases. The power converter circuit becomes more complex and its reliability decreases. This thesis focuses on three-phase multilevel converters based on a series connection of single phase inverters (partial cells) in each phase. It's shown that, feeding partial cells with unequal DC-voltages (asymmetric feeding), increases the number of levels of the generated output voltage without any supplemental complexity to the existing topology. Voltage resolution is increased through interpolating the generated output voltage phasor (three phase voltage in α-β frame). This is achieved by seeking the non redundant switching states of the power switches. The resultant converter can generate a very high resolution voltage phasor up to the possible maximum resolution. This approach is generalized for any number of partial cells. Each partial cell is fed through a three-phase diode rectifier, fed itself through the windings of a multi-secondary low frequency power transformer. From analytical expressions in continuous and discontinuous current conix duction modes, it is shown that, from a supply network point of view, a symmetrical multilevel converter has a smaller total harmonic distortion than an asymmetrical multilevel converter with the same number of partial cells per phase. An asymmetrical multilevel converter is not more interesting than a classical three-phase converter, but its total harmonic distortion is compatible to the recommended IEEE std 519-1992. It is also shown that the advantages of an asymmetric multilevel converter from a load point of view (generation of a high resolution voltage phasor, possibility to choose the number of redundant switching states, reduction of the number of power semiconductors for the same voltage resolution, flexibility for the DC-voltage feeding choice) and the advantages of a symmetrical multilevel converter from a supply network point of view (smaller total harmonic distorsion) can be combined. Simulation results and the experimental test setup showed the reliability of the suggested approach.

EPFL2004

Novel materials and algorithms for quantum technologies

Francesco Libbi

The enormous advancements in the ability to detect and manipulate single quantum states have lead to the emerging field of quantum technologies. Among these, quantum computation is the most far-reaching and challenging, aiming to solve problems that the classic computers could never address because of the exponential scaling, while quantum sensing exploits the ability to address single quantum states to realize ultra-sensitive and precise detectors. Defect centers in semiconductors play a primary role in these fields. The possibility to store information in the spin of their ground state, manipulate it through microwaves, and read it optically allows to use them as qubits. In addition, the very sharp dependence of their properties on temperature, strain and magnetic fields makes them very promising quantum sensors. In this Thesis we aim at contributing to the progress of quantum technologies both at the hardware and software level. From a hardware point of view, we study a key property of defect centers in semiconductors, the phonon-assisted luminescence, which can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. We predict the luminescence and study the exciton-phonon couplings within a rigorous many-body perturbation theory framework,an analysis that has never been performed for defect centers.In particular, we study the optical emission of the negatively-charged boron vacancy in 2D hexagonal boron nitride, which currently stands out among defect centers in 2D materials thanks to its promise for applications in quantum information and quantum sensing. We show that phonons are responsible for the observed luminescence, which otherwise would be dark due to symmetry. We also show that the symmetry breaking induced by the static Jahn-Teller effect is not able to describe the presence of the experimentally observed peak at 1.5 eV.The knowledge of the coupling between electrons and phonons is fundamental for the accurate prediction of all the features of the photoluminescence spectrum. However, the large number of atoms in a defect supercell hinders the possibility use density functional perturbation theory to study this coupling. In this work we present a finite-differences technique to calculate the electron-phonon matrix elements, which exploits the symmetries of the defect in such a way to use the very same set of displacement needed for the calculation of phonons. The computation of electron-phonon coupling thus becomes a simple post-processing of the finite-differences phonons calculation. On the quantum software side, we propose an improved quantum algorithm to calculate the Green's function through real-time propagation, and use it to compute the retarded Green's function for the 2-, 3- and 4-site Hubbard models. This novel protocol significantly reduces the number of controlled operations when compared to those previously suggested in literature. Such reduction is quite remarkable when considering the 2-site Hubbard model, for which we show that it is possible to obtain the exact time propagation of the

\ket{N\pm 1}

states by exponentiating one single Pauli component of the Hamiltonian, allowing us to perform the calculations on an actual superconducting quantum processor.

EPFL2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Akshay Balgarkashi, Titouan Charvin, Didem Dede, Anna Fontcuberta i Morral, Wonjong Kim, Raphaël François Lemerle, Jean-Baptiste Leran, Nicholas Paul Morgan, Valerio Piazza, Nicolas Tappy

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III-V semiconductors by integration on Si(100) remains a challenge still today. Vertical nanospades (NSPDs) are quasi-bi-crystal III-V nanostructures that grow on Si(100). Here, we showcase the potential of these structures in optoelectronics application by demonstrating InGaAs heterostructures on GaAs NSPDs that exhibit bright emission in the near-infrared region. Using cathodoluminescence hyperspectral imaging, we are able to study light emission properties at a few nanometers of spatial resolution, well below the optical diffraction limit. We observe a symmetric spatial luminescence splitting throughout the NSPD. We correlate this characteristic to the structure's crystal nature, thus opening new perspectives for dual wavelength light-emitting diode structures. This work paves the path for integrating optically active III-V structures on the Si(100) platform.

AMER CHEMICAL SOC2022