Publications associées à Tension de polarisation

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion

Christian Enz, Maria-Anna Chalkiadaki

Nanoscale CMOS devices display very high peak transit frequency Ft of several hundreds of GHz. This feature can be exploited for reducing power consumption by shifting the operating point towards moderate or eventually weak inversion where the Ft still rea ...

Elsevier2014

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Frank Nüesch, Roland Hany, Beat Ruhstaller

Bilayer organic solar cells based on trimethine cyanine donor and C-60 acceptor materials have been fabricated by coating the trimethine dye from solution on molybdenum oxide (MoO3) anode buffer layer. The choice of deposition solvent drastically influence ...

Amer Chemical Soc2014

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Maher Kayal, Adil Koukab, Denis Sallin

This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...

Institute of Electrical and Electronics Engineers2014

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Michael Graetzel, Florian Le Formal, Stanley David Tilley, Maurin Cornuz, Xiaoyan Wang

Transient absorption spectroscopy on subpicosecond to second time scales is used to investigate photogenerated charge carrier recombination in Si-doped nanostructured hematite (alpha-Fe2O3) photoanodes as a function of applied bias. For unbiased hematite, ...

American Chemical Society2014

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Jian Zhang

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

Time-resolved spin processes in Alq(3) light-emitting diodes

Jean-Philippe Ansermet, Francesco Comandè

Using pulsed electroluminescence detected magnetic resonance (PELDMR), we study the dynamics of spin processes in Alq(3) based light-emitting diodes. The transitions induced by magnetic resonance are found to be much faster than the space charge reaction t ...

Amer Physical Soc2014

Explicit drain current model of junctionless double-gate field-effect transistors

Jean-Michel Sallese, Ashkhen Yesayan

This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of ...

Pergamon-Elsevier Science Ltd2013

RF MEMS power sensors for ultra-low power wake-up circuit applications

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Wolfgang Amadeus Vitale

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Tension de polarisation

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Time-resolved spin processes in Alq(3) light-emitting diodes

Explicit drain current model of junctionless double-gate field-effect transistors

Electromechanical oscillators, parametric oscillators, and torsional resonators based on piezoresistive nanowires

RF MEMS power sensors for ultra-low power wake-up circuit applications

Graph Chatbot

Chattez avec Graph Search

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion

RF MEMS power sensors for ultra-low power wake-up circuit applications

Ultrafast Charge Carrier Recombination and Trapping in Hematite Photoanodes under Applied Bias

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Time-resolved spin processes in Alq(3) light-emitting diodes

Electromechanical oscillators, parametric oscillators, and torsional resonators based on piezoresistive nanowires

Explicit drain current model of junctionless double-gate field-effect transistors