Publications associées à Self-aligned gate

Inflection Phenomenon in Cryogenic MOSFET Behavior

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

2020

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Arin Can Ülkü

Single-photon avalanche diode (SPAD) imagers can perform fast time-resolved imaging in a compact form factor, by exploiting the processing capability and speed of integrated CMOS electronics. Developments in SPAD imagers have recently made them compatible ...

2019

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Arin Can Ülkü

Developing large arrays of single-photon avalanche diodes (SPADs) with on-chip time-correlated single-photon counting (TCSPC) capabilities continues to be a difficult task due to stringent silicon real estate constraints, high data rates and system complex ...

2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

From university to industry - challenges in upscaling optical microstructures for daylight redirection in buildings

André Gabriel Kostro, Josef Andreas Schuler, Philippe Couty

In this paper we present some of the challenges faced when upscaling optical microstructures from a lab scale 1x1 cm sized proof of concept sample to a square meter sized object that can be installed in a building. The optical microstructure in question is ...

IOP Science2019

A machine learning approach for power gating the FPGA routing network

Mirjana Stojilovic, Hossein Asadi

Power gating is a common approach for reducing circuit static power consumption. In FPGAs, resources that dominate static power consumption lie in the routing network. Researchers have proposed several heuristics for clustering multiplexers in the routing ...

IEEE COMPUTER SOC2019

Functionality Enhanced Memories for Edge-AI Embedded Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon, Marco Antonio Rios, William Andrew Simon

With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induced in ...

IEEE2019

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Self-aligned gate

Inflection Phenomenon in Cryogenic MOSFET Behavior

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Charge-Based EPFL HEMT Model

High-performance nanowire-based E-mode Power GaN MOSHEMTs

From university to industry - challenges in upscaling optical microstructures for daylight redirection in buildings

A machine learning approach for power gating the FPGA routing network

Double-gate field-effect-transistor based biosensor

Functionality Enhanced Memories for Edge-AI Embedded Systems

Graph Chatbot

Chattez avec Graph Search

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Double-gate field-effect-transistor based biosensor

A machine learning approach for power gating the FPGA routing network

Functionality Enhanced Memories for Edge-AI Embedded Systems

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager

Fluorescence lifetime imaging with a single-photon SPAD array using long overlapping gates: an experimental and theoretical study

Charge-Based EPFL HEMT Model

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

From university to industry - challenges in upscaling optical microstructures for daylight redirection in buildings

Inflection Phenomenon in Cryogenic MOSFET Behavior