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Concept

Scanning probe lithography

Résumé

Scanning probe lithography (SPL) describes a set of nanolithographic methods to pattern material on the nanoscale using scanning probes. It is a direct-write, mask-less approach which bypasses the diffraction limit and can reach resolutions below 10 nm. It is considered an alternative lithographic technology often used in academic and research environments. The term scanning probe lithography was coined after the first patterning experiments with scanning probe microscopes (SPM) in the late 1980s. Classification The different approaches towards SPL can be classified by their goal to either add or remove material, by the general nature of the process either chemical or physical, or according to the driving mechanisms of the probe-surface interaction used in the patterning process: mechanical, thermal, diffusive and electrical. Overview Mechanical/thermo-mechanical Mechanical scanning probe lithography (m-SPL) is a nanomachining o

Source officielle

https://en.wikipedia.org/wiki/Scanning_probe_lithography

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Les nanosciences et nanotechnologies (d’après le grec , « nain »), ou NST, peuvent être définies au minimum comme l’ensemble des études et des procédés de fabrication et de manipulation de structures

Nanolithography (NL) is a growing field of techniques within nanotechnology dealing with the engineering (patterning e.g. etching, depositing, writing, printing etc) of nanometer-scale structures on v

Dip pen nanolithography (DPN) is a scanning probe lithography technique where an atomic force microscope (AFM) tip is used to create patterns directly on a range of substances with a variety of inks.

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This course gives the basics for understanding nanotechnology from an engineer's perspective: physical background, materials aspects and scaling laws, fabrication and imaging of nanoscale devices.

The students understand the relevant experimental and theoretical concepts of the nanoscale science. The course move from basic concepts like quantum size effects to hot fields such as spin transport for data storage applications (spintronics), carbon electronics, or nanocatalysis.

Micro- and nanofabrication can be taught to students and professionals by textbooks and ex-cathedra lectures, but the real learning comes from seeing the manufacturing steps as they happen. This MOOC will not only explain the basics of microfabrication but also show the practice through videos.

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Thermal scanning probe lithography for 2D material-based gas sensing

Berke Erbas

Recently, two-dimensional (2D) material based gas sensing, especially transition metal dichalcogenide-based sensing, has been widely investigated thanks to its room temperature sensing ability. Unlike metal oxide based sensors, 2D material-based sensing can be carried out without a heater, therefore it reduces the power consumption and makes them promising candidates for smartphones and wearable electronic devices. Besides gas sensing ability, these 2D materials are interesting and promising candidates for electronics and optoelectronics applications. For example, monolayer molybdenum disulfide (MoS2), which is a 2D semiconductor with direct bandgap, is one of the promising candidates for transistor but it has low mobility compared to silicon. To replace silicon-based devices, strain engineering of MoS2 is widely investigated. It is observed that tensile strain tunes the bandgap of MoS2, enhances carrier mobility and improves NO2 gas sensing by piezotronic effect. Different strategies have been used to strain MoS2 such as flexible substrates to stretch the exfoliated material on top of them, silicon/ dielectric substrates with surface roughness or silicon/dielectric substrates patterned with nanocone structure to locally strain transferred MoS2. Herein, field effect transistor with three-dimensionally patterned gate oxide is designed, fabricated and electrically characterized for sensing application. Thermal scanning probe lithography, which is a direct three-dimensional nanofabrication technique, is used for the fabrication of sinusoidal surfaces. By transferring the exfoliated MoS2 flakes on top of these sinusoidal gate oxide, biaxial strain is induced. Unlike counterparts, thermal scanning probe lithography-based patterning provides us design flexibility, which controls the direction of strain and the strain rate. As a result of Raman spectroscopy, the shifts in out-of-plane vibration (A1g) and in-plane vibration (E1 2g) modes are up to 0.87 cm−1 and 2.60 cm−1, respectively. According to the theoretical Raman spectra calculations of strained MoS2 [1], these shifts correspond to an average strain of 0.58% in a circular area with 1 μm diameter. The strain of 0.58% is obtained for a sinusoidal pattern having a 23 nm amplitude and a 440 nm period. Besides, as a result of photoluminescence characterization, it is shown that an average strain of 0.39% leads to a 35 meV redshift for A excitation peak position. Consequently, the strain of MoS2 on the surface patterned by thermal scanning probe lithography tunes the bandgap of MoS2 by 90.11 meV/%.

2021

Chargement

2020

Chargement

Evaluation of thermal scanning probe lithography patterns

Pau Mato Sabat, Vincent Philippe Paratte

Thermal scanning probe lithography is a novel lithographic method that allows to create three dimension pattern with high precision at the micro and nano scale. In this project, the impact of two important parameters (the distance be- tween the tip and the substrate before patterning and the electrostatic force) on the depth and the roughness of the pattern were tested. An experiment about a pulsed mode was done to observe the impact on the depth and the roughness. In the end, a small experiment was done to test the repeatability between experiments with identical parameters. This project allowed to show the important impact of the tested parameters on the patterning quality. Moreover, it showed that the use of a new tip changes highly the characteristics of the pattern.

2016

Chargement

Thermal scanning probe lithography for 2D material-based gas sensing

Berke Erbas

2021