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In the frame of the RD26 collaboration at CERN we have built and tested several prototypes of fast-RICH detectors suitable for the construction of large systems. The detectors used a solid photocathode consisting of a 500 nm CsI layer evaporated on a conve ...
A wide range of photodetectors has been investigated, at various wavelengths and in various time domain operating conditions (from low frequency modulated cw sources to pulsed sources). The most promising devices, which have been realized, optimized (by us ...
The properties of Pb1-xCaxTiO3 (x=0-30) thin films for applications in point-detectors and arrays can be further improved ii porous, low-dielectric constant layers are being Used. Both 2-methoxyethanol and 1,3-propanediol based solution precursors were use ...
An optoelectric radiation detector detecting short wave electromagnetic radiation, characterized by a charge transfer layer containing a hole conduction material. ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
An entire microsystem for high accuracy magnetic field measurement based on vertical Hall devices has been simulated. In accordance with existing knowledge about semiconductor physics and experimental results, a functional SPICE- model for a vertical Hall ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
Pyroelectric thin-film point detectors and 1 x 12 arrays have been fabricated and characterized. They consist of sol-gel-deposited PZT thin-film elements on micromachined Si3N4/SiO2 membranes. The measured current and voltage response as a function of modu ...
A spectrometer has been constructed for the study of (n, α) reactions at 14 MeV, By detecting the 4He particle associated with neutron production, it is possible to measure the a time-of-flight in addition to the residual energy and energy loss, as measure ...
The heat pretreatment of Ni at 500-700 Deg gives a nonstoichiometric Ni oxide which shows metallic cond. and low activity for O evolution; at higher temps. (>700 Deg), a nonconducting NiO (p-type semiconductor) is formed. [on SciFinder (R)] ...