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Considering the spectral problem of microinstabilities in a curved system, methods for solving the global gyrokinetic equation are presented for the simple case of a cylindrical plasma. They prove to be efficient for computing the full unstable spectrum of ...
This paper presents a feasibility study for a motional Stark effect (MSE) [F. M. Levinton , Phys. Rev. Lett. 63, 2060 (1989)] diagnostic on the TCV tokamak. A numerical simulation code has been used to identify the optimal port arrangement and geometrical ...
Direct measurements of a collisionless current channel during driven magnetic reconnection are obtained for the first time on the Versatile Toroidal Facility. The size of the diffusion region is found to scale with the electron drift orbit width, independe ...
High resolution transmission electron microscopy (HRTEM) and X-ray energy dispersive spectroscopy (EDS) were applied to study the structure of hydroxyapatite (HAP) coatings deposited by plasma spraying on different substrates (Cu, Cr, Ni, NaCl, BaF2). Coat ...
Our recent developments concerning the fabrication of polymer microchips and their applications for biochemical analyses are reviewed. We first describe two methods of fabrication of polymer microfluidic chips, namely UV-laser photoablation and plasma etch ...
This paper describes the design and the experimental validation of a multivariable digital controller for a Tokamak, the Tokamak A configuration variable (TCV). The design of the controller is based on a linearized model of the plasma confined in the Tokam ...
Synthetic boron doped diamond electrodes and microelectrodes were manufd. with techniques usually utilized in microelectronics: HFCVD coating, optical photolithog. and plasma etching. These electrodes were characterized in terms of their electrochem. prope ...
Boron nitride films were deposited by r.f. capacitively-coupled plasma (13.56 MHz) using two different gas mixtures: Ar-B2H6-NH3 and Ar-B2H6-N-2. In order to study the gas-phase reactions of the plasma in situ Fourier transform infrared absorption spectros ...
The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, uniformity) ...