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Nowadays, several state-of-the-art multilevel converter topologies are used for numerous industrial medium-voltage (MV) high-power variable-speed drive applications. The 3-level neutral point clamped (3L-NPC) topology is one of those and is often used as a ...
Medium voltage high-power applications are usually realized using high voltage semiconductors (3.3 kV and above) operated in the hard switching mode with low switching frequencies (several hundreds of hertz). However, for high-power dc–dc converters employ ...
Medium voltage drives are essential technology for various high power demanding industrial applications. To satisfy ever increasing customer demands, a power extension of the Integrated Gate Commutated Thyristor (IGCT) based 3L-NPC inverter unit, has been ...
Power electronic transformer (PET), a converter technology that utilizes power semiconductors in combination with medium-frequency transformers, is considered a promising solution for certain applications requiring flexible galvanic isolation. Among are th ...
A non-isolated DC-DC converter is presented, based on the current diverter principle. The converter is foreseen for larger photovoltaic plants or other DC collection networks for renewable energy sources. The topology allows the DC-DC conversion as step-up ...
Nanoscale CMOS devices display very high peak transit frequency Ft of several hundreds of GHz. This feature can be exploited for reducing power consumption by shifting the operating point towards moderate or eventually weak inversion where the Ft still rea ...
Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
A non-isolated DC-DC converter is presented, based on the current diverter principle. The converter is foreseen for large power electronic applications where normally the converters are fed from DC supplies at a typical voltage level of around one or two k ...
We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (
Nowadays, several state-of-the-art multilevel converter topologies are used for numerous industrial medium-voltage (MV) high-power variable-speed drive applications. The 3-level neutral point clamped (3L-NPC) topology is one of those and is often used as a ...