Concept

Power semiconductor device

Publications associées (388)

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Thermally isolated MOSFET for gas sensing application

Nico de Rooij, Danick Briand

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...

2001

Investigation of the 3-Level Unified Power Flow Controller (UPFC)

Jean-Jacques Simond, Philippe Allenbach, Alain Sapin

Flexible AC Transmission Systems (FACTS) are systems based on power electronics using GTO or IGCT semiconductors [1] that allow a better use of the transfer capacities of the transmission lines and permit to satisfy the requirements due to the liberalizati ...

2001

A DC hybrid circuit breaker with ultra fast contact opening and integrated gate-commutated thyristors (IGCT)

Alfred Rufer

Air-magnetic circuit breakers are widely used for short-circuit protection in DC electric railways or industrial plants. The well-known drawbacks of these breakers are mainly a slow breaking action, a short lifetime and high maintenance costs due to the de ...

2000

Jini Technology Applied to Railway Systems

Txomin Nieva

In the world of pervasive computing where large management systems, as well as small devices, all become interconnected, the problem of the configuration and management of networks is becoming increasingly complex. System administrators have to deal with m ...

2000

Neoclassical tearing modes

Olivier Sauter, Holger Reimerdes, Hartmut Zohm

Neoclassical tearing modes are one of the most serious concerns for operation on a next-step tokamak device. The modes occur on present tokamaks at normalized pressure (beta (N)) values comparable to those envisaged For baseline scenarios in future devices ...

2000

A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits

Christian Enz

Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be ad ...

2000

Enforcing Service Availability in Mobile Ad-Hoc WANs

Jean-Pierre Hubaux, Levente Buttyan

In this paper, we address the problem of service availability in mobile ad-hoc WANs. We present a secure mechanism to stimulate end users to keep their devices turned on, to refrain from overloading the network, and to thwart tampering aimed at converting ...

2000

Enforcing Service Availability in Mobile Ad-Hoc WANs

Jean-Pierre Hubaux, Levente Buttyan

2000

Physical origin of conduction in PZT thin films

Alexander Tagantsev, Igor Stolichnov

Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...

1999

Coordinated control of multiple series FACTS devices

Alexandre Oudalov

This paper examines the use of thyristor controlled series capacitors (TCSCs) for the redistribution of active power flows (PFs) in a transmission network and presents a simple model of a hierarchical coordinated control system for multiple devices. The TC ...

1999