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Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
A blue resonant cavity light emitting diode with a 50% Al-content crack-free GaN/AlGaN distributed Bragg reflector is reported. The structure shows excellent optical properties and the benefits of the cavity structure are clearly seen in the narrowed spect ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off.state to the on-state (saturation). The additional voltage drop due to the quasi.saturation of the junction hardly depends on the DC-link ...
We have directly measured, under operating conditions, the distributions of carrier densities and temperatures in a gain-clamped semiconductor optical amplifier designed for operation at 1.55 mum. As expected, longitudinal spatial hole burning is much smal ...
A highly sensitive magnetic sensor microsystem based on a flail device is presented. This microsystem consists of a Hall device improved by an integrated magnetic concentrator and new circuit architecture for the signal processing. It provides an amplifica ...
We present a new hybrid technology for the realization of three-dimensional millimetre-size inductors for low-power (0.1–1 W) applications. Our devices consist of electroplated planar Cu coils, realized within a high-resolution (5 µm) polyimide flex-foil p ...
We have developed a novel batch-type technology for making three-dimensional (3-D) millimeter-sized transformers for ultrasmall low-power (0.1 to 1 Watt) applications. The technology uses the 3-D micropatterning of ferrite wafers by powder blasting to form ...
Three 30 kV/10 mA solid state pulsed modulators have been delivered to the CRPP in Lausanne, by the company JEMA. Each modulator supplies the anode grid of a triode type gyrotron, used for heating purpose at the third harmonic in the TCV Tokamak. The main ...
During the turn-on process insulated gate bipolar transistors (IGBTs) traverse a quasi-saturation region from the off-state to the on-state (saturation). The additional voltage drop due to the quasi-saturation of the junction hardly depends on the DC-link ...
A review with refs. concerning electrochem. promotion of catalysis is presented. Recent progress made in our lab. in the field of electrochem. promotion of heterogeneous catalytic gas reactions is presented. The phenomenon consists of non-Faradaic modifica ...
