Concept

MESFET

Publications associées (120)

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Mihai Adrian Ionescu, Luc Thévenaz, Kirsten Emilie Moselund

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

IEEE2006

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

Observation of incubation times in the nucleation of silicon nanowires obtained by the vapor-liquid-solid method

Anna Fontcuberta i Morral

We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of s ...

Japan Society of Applied Physics2006

Observation of Incubation Times in the Nucleation of Silicon Nanowires Obtained by the Vapor-Liquid-Solid Method

Anna Fontcuberta i Morral

Japan Society of Applied Physics2006

Ferroelectric gates with rewritable domain nanopatterns for modulation of transport properties in GaN/AlGaN heterostructures

Nava Setter, Jean-François Carlin, Igor Stolichnov, Enrico Colla, Lisa Malin

The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...

AIP2005

The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

Danick Briand

The hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor (MIS) structure. Therefore an influence of the choice of in ...

2005

Semiconductor device

Serguei Okhonin

A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...

2004

Solar blind (Al,Ga)N metal-semiconductor-metal devices for high performance flame detection

Nicolas Grandjean, Mauro Mosca

In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...

Materials Research Society2003

Electrical charge carrier semiconductor device

Serguei Okhonin

Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...

2003

Method of driving a semiconductor device

Serguei Okhonin

2003

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