We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü