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Using a first-principles approach, we study the incorporation of nitrogen at the Si(001)-SiO2 interface by calculating N Is core-level shifts for several relaxed interface models. The unusually large shift with oxide thickness of the principal peak in phot ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal ...
For pt.II see ibid. vol.73, p.7690 (1993). In order to investigate the interface between polycrystalline-silicon (poly-Si) and crystalline silicon (c-Si), which is of crucial importance for the passivation of high-voltage devices, an infrared diagnostic me ...
A simple method has been developed for the prodn. of Au surfaces which are uniformly flat over large areas. Si wafers serve as substrates for the evapn. of thin Au layers. A glass slide glued onto the Au film allows successful sepn. of the Au layer from th ...
A study was conducted on the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi4Ti3O12, BIT), Increased grain size increased the conductivity in undoped BIT as did acceptor dopants that substit ...
Spray pyrolysis has been widely used for the prepn. of thin (.apprx.0.1 mm) and transparent SnO2 films on glass substrates. The parameters of the spray pyrolysis for the prepn. of thick SnO2-Sb2O5 conductive films on Ti substrates were studied for electroc ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
The dramatic enhancement of the silicon room-temperature oxidation rate by a Na overlayer has been attributed to the spectator catalytic action of the alkali metal. In contrast, we show evidence that Na participates in the oxidation process binding an oxyg ...
Motor parts produced by casting are subjected to particularly high local stresses and must be reinforced by high-strength inserts. The insertion is normally made mechanically after casting, but, if good adhesion could be obtained, it would be preferable to ...
