Jean-François Carlin

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Publications associées (189)

Influence of Microsecond Pulse Helium Plasma Flow on the Surface Morphology and Crystal Structure of the Photovoltaic Converters Based on CdS/CdTe

Jean-François Carlin

The influence of pulsed helium plasma irradiation, with a 10 μs duration and a surface energy load of 0.2 MJ m – 2, on the elemental and phase composition, surface morphology and crystal structure of thin-film heterosystems based on CdS/CdTe was studied. T ...

2024

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Thomas Fjord Kjaersgaard Weatherley, Pierre Christophe Lottigier, Davide Maria Di Paola

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

MDPI2023

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

AIP Publishing2023

III-N Optoelectronic Devices: Understanding the Physics of Electro-Optical Degradation

Nicolas Grandjean, Jean-François Carlin, Camille Haller

III-N optoelectronic devices are of great interest for many applications. Visible emitters (based on InGaN) are widely used in the lighting, display and automotive fields. Ultraviolet LEDs (based on AlGaN) are expected to be widely used for disinfection, m ...

SPIE2023

Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau

We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking microphotoluminescence spectroscopy with Raman thermometry and other spectroscopic techniques, we ...

Amer Physical Soc2023

Measurement of the inclusive and differential t(t)over-bar gamma cross sections in the dilepton channel and effective field theory interpretation in proton-proton collisions at root s=13 TeV

Matthias Finger, Varun Sharma, Olivier Martin, Ian Smith, Jean-François Carlin, Arvind Shah, Rakesh Chawla, Thomas Mountford, Chao Wang, João Miguel das Neves Duarte

The production cross section of a top quark pair in association with a photon is measured in proton-proton collisions in the decay channel with two oppositely charged leptons (e(+/-)mu(-/+), e(+)e(-), or mu(+)mu(-)). The measurement is performed using 138 ...

Springer Nature2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Smooth GaN membranes by polarization-assisted electrochemical etching

Nicolas Grandjean, Jean-François Carlin, Joachim Armand Simonne Ciers

III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical ...

AMER INST PHYSICS2021

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