Jean-François Carlin

Publications associées (189)

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Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Nicolas Grandjean, Jean-François Carlin, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Joachim Armand Simonne Ciers, Davide Maria Di Paola

Ultrafast nonlinear photonics enables a host of applications in advanced on-chip spectroscopy and information processing. These rely on a strong intensity dependent (nonlinear) refractive index capable of modulating optical pulses on sub-picosecond timesca ...

Nature Research2021

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Nicolas Grandjean, Jean-François Carlin, Yao Chen, Wei Liu

An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...

AIP Publishing2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

IOP PUBLISHING LTD2021

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

Nicolas Grandjean, Jean-François Carlin, Elison de Nazareth Matioli, Pirouz Sohi

In this study, we propose a novel, high-conductivity multi-channel heterostructure based on lattice-matched InAlN/GaN channels with modulation-doping-induced two-dimensional electron gases (2DEGs). To facilitate device processing, the channel period thickn ...

IOP PUBLISHING LTD2021

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

IOP PUBLISHING LTD2021

Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum

Romuald Houdré, Nicolas Grandjean, Jun Wang, Jean-François Carlin, Matteo Galli, Momchil Minkov, Marco Clementi

Second-harmonic generation in nonlinear materials can be greatly enhanced by realizing doubly resonant cavities with high quality factors. However, fulfilling such doubly resonant condition in photonic crystal (PhC) slab cavities is a long-standing challen ...

2020

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller

The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...

ELSEVIER SCIENCE SA2020

Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum

Nicolas Grandjean, Romuald Houdré, Jean-François Carlin, Matteo Galli, Jun Wang

Making use of bound states in the continuum, we present experimental results on efficient second harmonic generation in photonic crystal cavities supporting doubly-resonant modes. The second harmonic emission is a vortex beam with radial polarization and e ...

IEEE2020

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