Mihai Adrian Ionescu, Didier Bouvet, Vincent Pott, Montserrat Fernandez-Bolanos Badia, Nicolas Abelé, Georges-André Racine
This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...
Elsevier2006