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Daniel Grogg

Cette personne n’est plus à l’EPFL

Publications associées (33)

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Active Microelectromechanical Resonator

Daniel Grogg

The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...

EPFL2010

Active multi gate micro-electro-mechanical device with built-in transistor

Mihai Adrian Ionescu, Daniel Grogg

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transis ...

2010

Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators

Mihai Adrian Ionescu, Andrea Lovera, Daniel Grogg

Mechanical resonators are attractive for many applications in signal processing and sensing applications [1]. However, the aggressive scaling of their dimensions into the nanometer range with a simultaneous increase of the resonance frequency makes their d ...

2010

Resonant-Body Fin-FETs with sub-nW power consumption

Mihai Adrian Ionescu, Andrea Lovera, Dimitrios Tsamados, Daniel Grogg, Sebastian Thimotee Bartsch

This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance fr ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

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The paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect to the catalyst pattern design, the fabrication of a CNT MEM switch, nanomanipulating a CNT array by FIB and the electrical characterization of the device to evalua ...

Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa2009

Small signal modeling of charge and piezoresistive modulations in active MEM resonators

Mihai Adrian Ionescu, Dimitrios Tsamados, Daniel Grogg, Suat Ayoz

In this work we establish novel analytical and small signal circuit modeling of two major effects that co-exist in active Micro-Electro-Mechanical resonators: charge and piezoresistance modulations. Analytical expressions for the output current of vibratin ...

2009

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In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor

Mihai Adrian Ionescu, Dimitrios Tsamados, Daniel Grogg, Marco Mazza, Hüseyin Cumhur Tekin, Nicoleta-Diana Ciressan

The fabrication, design, and characterization of high-quality factor microelectromechartical (MEM) resonators fabricated on thin-film silicon-on-insulators (SOIs) are addressed in this paper. In particular, we investigate laterally vibrating bulk-mode reso ...

Institute of Electrical and Electronics Engineers2009

Self-sustained low power oscillator based on vibrating body field effect transistor

Mihai Adrian Ionescu, Daniel Grogg, Suat Ayoz

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

2009