Publications de Clemens Benedict Nyffeler

Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level

Paul Muralt, Stefan Mertin, Clemens Benedict Nyffeler, Andrea Mazzalai

Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound g ...

IEEE2019

Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: influence of intrinsic stress and sputtering parameters

Paul Muralt, Gabriel Christmann, Stefan Mertin, Silviu Cosmin Sandu, Vladimir Pashchenko, Clemens Benedict Nyffeler, Mohammad Fazel Parsapour Kolour

Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for use in next generation RF filters, sensors, actuators and energy harvesting de ...

Ieee2017

Graphene Field Effect Devices and Circuits : Theory and Fabrication

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Davide Sacchetto, Yusuf Leblebici, Clemens Benedict Nyffeler

We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam l ...

Elsevier2015

High-Frequency Scaled MoS2 Transistors

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Daria Krasnozhon, Subhojit Dutta

The interest in MoS 2 for radio-frequency (RF) application has recently increased1'2. However, little is known on the scaling behavior of transistors made from MoS 2 for RF applications, which is important for establishing performance limits for electronic ...

2015

MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

2015

MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Daria Krasnozhon, Dominik Sebastian Lembke

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

American Chemical Society (ACS)2014

Graphene Field Effect Devices Operating in Differential Configuration

Davide Sacchetto, Yusuf Leblebici, Clemens Benedict Nyffeler

After decades of miniaturization and performance tuning, Silicon electronics is approaching its technological limits. In the search for alternative transistor channel materials, Graphene has been given much attention since its discovery in 2004, mainly bec ...

2014

A Die-Level Post-CMOS Processing Protocol for Multi-Layer 3D Integration

Davide Sacchetto, Seniz Esra Küçük, Yusuf Leblebici, Clemens Benedict Nyffeler

In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve multilayer stacking. This protocol includes TSV formation on the top chip, bonding the chips on top of each other, and finally the electrical connection pro ...

2014