Tiankai Zhu

Cette personne n’est plus à l’EPFL

Publications associées (14)

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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir, Tiankai Zhu, Jelena Ristic

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Denis Martin, Tiankai Zhu

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Mauro Mosca, Dobri Simeonov, Tiankai Zhu

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

2007

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Nicolas Grandjean, Raphaël Butté, Denis Martin, Tiankai Zhu

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

2007

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Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Mauro Mosca, Dobri Simeonov, Tiankai Zhu

2007

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Nicolas Grandjean, Raphaël Butté, Denis Martin, Tiankai Zhu

2007

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Pierre Michel Corfdir, Tiankai Zhu, Jelena Ristic

AIP American Institute of Physics2009

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Denis Martin, Tiankai Zhu

2008