Publications de Clara-Fausta Moldovan

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Jürgen Brugger, Mihai Adrian Ionescu, Ali Saeidi, Clara-Fausta Moldovan, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan

2018

Near optimal graphene terahertz non-reciprocal isolator

Juan Ramon Mosig, Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Clara-Fausta Moldovan, Michele Tamagnone

Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important ope ...

Nature Publishing Group2016

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Michele Tamagnone, Wolfgang Amadeus Vitale

We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and inve ...

IEEE2016

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Michele Tamagnone, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Luca Petit

The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a fi ...

IEEE2016

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

Juan Ramon Mosig, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Michele Tamagnone, Pankaj Sharma, Wolfgang Amadeus Vitale

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications an ...

American Chemical Society (ACS)2016

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Juan Ramon Mosig, Mihai Adrian Ionescu, Anja Skrivervik, Clara-Fausta Moldovan, Julien Perruisseau-Carrier, Michele Tamagnone, Santiago Capdevila Cascante, Hamed Hasani, Pietro Maoddi

In this paper, two THz reflectarray surfaces have been designed and fabricated in order to deflect a plane wave with any polarization and with a specific incident angle to three different specific directions each at distinct three frequencies of 0.7, 1.0 a ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Mihai Adrian Ionescu, Andreas Schueler, Clara-Fausta Moldovan, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonio Paone, Luca Petit

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

Elsevier Science Sa2016

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Antonio Paone

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

IEEE2016

Enabling High Frequency Reconfigurable Functions with Graphene

Clara-Fausta Moldovan

As the scaling of complementary metal-oxide-semiconductor (CMOS) technology is reaching fundamental limitations, novel device concepts and materials have started to be investigated to overcome the scaling challenges for integrated circuits. Graphene has be ...

EPFL2016