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The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability. Exploiting this design, we characterized VO2 switches with extremely abrupt transitions (< 1 mV/dec) until 60 degrees C and a reduction in actuation voltage up to 38.3% with respect to conventional devices.
Giovanni De Micheli, Alessandro Tempia Calvino, Dewmini Sudara Marakkalage, Mingfei Yu, Siang-Yun Lee, Rassul Bairamkulov