Publications de Farzan Jazaeri

Modeling the Effects of Interface Traps on DC Characteristics in GaN High-Electron-Mobility Transistors

This paper presents a physics-based analytical model for investigating charge trapping in GaN high-electron-mobility transistors (HEMTs), using the École Polytechnique Fédérale de Lausanne HEMT core model. It introduces a realistic continuous density of in ...

2025

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate th ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

Simplified EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

IEEE Computer Society2024

Non Quasi-Static Model of DG Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

2024

Design space of quantum dot spin qubits

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the electrochemical potentials of each quantum dot. Quantum dots offer high levels of reliability and scal ...

ELSEVIER2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs

Christian Enz, Farzan Jazaeri, Hung-Chi Han

In a MOSFET transistor, the subthreshold swing defines the switching efficiency, and the associated slope factor, or so-called body factor, is a critical parameter in charge-based models. However, in an advanced Fully -Depleted Silicon-On-Insulator (FDSOI) ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Farzan Jazaeri, Parnian Ferdowsi, Michael Saliba

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the quasi-neutral regions of a perovskite solar cell. Here, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Tunneling Current Through a Double Quantum Dots System

Jean-Michel Sallese, Farzan Jazaeri

Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independently c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022