Publications de Sonia Conesa Boj

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Royal Society of Chemistry2017

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Fauzia Jabeen, Alberto Casadei, Sonia Conesa Boj, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Eleonora Russo, Sonia Conesa Boj, Anna Dalmau Mallorquí, Heidi Andrea Potts, Jelena Vukajlovic Plestina

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Daniel Rüffer, Sonia Conesa Boj, Francesca Amaduzzi

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires ca ...

IEEE2015

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj, Anna Dalmau Mallorquí, Eleonora Russo, Ignasi Canales Mundet

The ability to rationally tune the morphology of nanostructures is a fundamental milestone in nanoscale engineering. In particular, the possibility to switch between different shapes within the same material system represents a further step in the developm ...

Elsevier2015

Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj

Semiconductor nanowires have increased the palette of possible heterostructures thanks to their more effective strain relaxation. Among these core shell heterostructures are much more sensitive to strain than axial Ones. It is now accepted that the formati ...

American Chemical Society2015

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj

We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensi ...

Elsevier2015

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Sonia Conesa Boj, Luca Francaviglia, Yannik Fontana, Léo Duchêne

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

American Institute of Physics2015

Plastic and Elastic Strain Fields in GaAs/Si Core-Shell Nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Sylvain Dunand, Martin Heiss, Eleonora Russo, Sonia Conesa Boj

Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was not possible before with thin film technology. In turn, this opens new avenues for applications in the areas of energy harvesting, electronics, and optoele ...

American Chemical Society2014