Publications de Jury Sandrini | EPFL Graph Search

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Giovanni De Micheli, Davide Sacchetto, Jury Sandrini, Pierre-Emmanuel Julien Marc Gaillardon

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Electrochemical Society2017

Fabrication, Characterization and Integration of Resistive Random Access Memories

Jury Sandrini

The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...

EPFL2017

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

2017

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Ieee2016

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack, Marios Barlas

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

Institute of Electrical and Electronics Engineers2016

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh, Marios Barlas

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

Ieee2016

Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology

Davide Sacchetto, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operati ...

2015