Publications de Maneesha Rupakula

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Junrui Zhang, Erick Antonio Garcia Cordero, Maneesha Rupakula, Hoël Maxime Guérin, Francesco Bellando, Fabien Patrick Wildhaber, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Mihai Adrian Ionescu, Johan Frédéric Longo, Junrui Zhang, Maneesha Rupakula, Erick Antonio Garcia Cordero, Hoël Maxime Guérin, Francesco Bellando, Fabien Patrick Wildhaber, Neil Ebejer

IEEE2018

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

Mihai Adrian Ionescu, Maneesha Rupakula, Junrui Zhang, Hoël Maxime Guérin, Erick Antonio Garcia Cordero, Johan Frédéric Longo, Francesco Bellando, Fabien Patrick Wildhaber, Guillaume Charles Henri Herment

This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (ii) al ...

IEEE2018