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Fauzia Jabeen

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Publications associées (7)

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Periodic photonic structures have attracted much interest due to their versatility for controlling light propagation. The dispersion of photon modes in photonic lattices exhibits an energy band structure analo-gous to the electronic one in crystals. An imp ...

AMER PHYSICAL SOC2020

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We present an experimental signature of the Anderson localisation of microcavity polaritons, and provide a systematic study of the dependence on disorder strength. We reveal a controllable degree of localisation, as characterised by the inverse-participati ...

Springer2019

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Multiple polariton modes originating from the coupling of quantum wells in planar microcavity

Benoît Marie Joseph Deveaud, Daniel Oberli, Fauzia Jabeen, Claudéric Ouellet-Plamondon, Grégory Chilpéric Sallen

We report on the observation of multiple polariton modes, originating from an electronic coupling between quantum wells inside a planar microcavity. A series of excitonic transitions are measured for a bare quantum well stack and are precisely identified t ...

American Physical Society2015

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Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Federico Matteini, Heidi Andrea Potts, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

Electrical transport in C-doped GaAs nanowires: surface effects

Alberto Casadei, Martin Heiss, Eleonora Russo, Fauzia Jabeen, Jil Schwender, Mohammad Ramezani

The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pi ...

Wiley-Blackwell2013