Dmitry Ovchinnikov

Cette personne n’est plus à l’EPFL

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Publications associées (15)

Single-layer MoS2 nanopores as nanopower generators

Aleksandra Radenovic, Andras Kis, Dumitru Dumcenco, Michael Graf, Ke Liu, Dmitry Ovchinnikov, Jiandong Feng

Making use of the osmotic pressure difference between fresh water and seawater is an attractive, renewable and clean way to generate power and is known as 'blue energy'(1-3). Another electrokinetic phenomenon, called the streaming potential, occurs when an ...

Nature Publishing Group2016

High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov

We give here an overview on our results on the large-area growth of 2D transition metal dichalcogenide semiconductors MoS2, MoSe2, WSe2 using chemical vapor deposition. The growth of MoS2 on sapphire occurs epitaxially with the crystalline orientation of t ...

Ieee2016

Large-Area Epitaxial Monolayer MoS2

Nicola Marzari, Anna Fontcuberta i Morral, Aleksandra Radenovic, Philippe Gillet, Andras Kis, Dumitru Dumcenco, Marco Gibertini, Yen-Cheng Kung, Oriol López Sánchez, Daria Krasnozhon

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over ...

Amer Chemical Soc2015

Large-area MoS2 grown using H2S as the sulphur source

Aleksandra Radenovic, Philippe Gillet, Andras Kis, Duncan Thomas Lindsay Alexander, Dumitru Dumcenco, Dmitry Ovchinnikov, Oriol López Sánchez

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

2015

Electrical Transport Properties of Single-Layer WS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Adrien Victor Allain

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment a ...

Amer Chemical Soc2014

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