Personne

Philipp Friedrich Hermann Löper

Cette personne n’est plus à l’EPFL

Publications associées (19)

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Christophe Ballif, Andrea Ingenito, Philipp Friedrich Hermann Löper

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Andrea Ingenito, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

A passivating contact for silicon solar cells formed during a single firing thermal annealing

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Andrea Ingenito, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Oscar Esteban Rucavado Leandro

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

NATURE PUBLISHING GROUP2018

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

Christophe Ballif, Jonas Geissbühler, Mathieu Gérard Boccard, Stefaan De Wolf, Monica Morales Masis, Jérémie Werner, Philipp Friedrich Hermann Löper, Oscar Esteban Rucavado Leandro, Julie Amandine Dreon, Stephanie Essig

Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole‐sele ...

2018

Complex Refractive Indices of Cesium–Formamidinium-Based Mixed-Halide Perovskites with Optical Band Gaps from 1.5 to 1.8 eV

Christophe Ballif, Quentin Thomas Jeangros, Gabriel Christmann, Florent Sahli, Arnaud Walter, Sylvain Nicolay, Björn Niesen, Jérémie Werner, Gizem Nogay, Philipp Friedrich Hermann Löper, Matthias Wolfgang Bräuninger, Chien-Jen Yang, Peter Joseph Fiala

Cesium-formamidinium-based mixed-halide perovskite materials with optical band gaps ranging from 1.5 to 1.8 eV are investigated by variable-angle spectroscopic ellipsometry. The determined complex refractive indices are shown to depend on the fabrication p ...

2018

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Andrea Ingenito, Gizem Nogay, Philipp Friedrich Hermann Löper

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

ELSEVIER SCIENCE BV2018

In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurement ...

WILEY2018

Numerical Simulation of Temperature Dependence of MoOx Based SHJ Solar Cell

Christophe Ballif, Philipp Friedrich Hermann Löper, Stephanie Essig

Transition metal oxides based high efficiency silicon heterojunction (SHJ) solar cells have emerged as promising candidate due to their low manufacturing cost and avoidance of poisonous dopant gases. Temperature dependent J V curves in such solar cells cou ...

AMER INST PHYSICS2018

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