Publications de Père Roca i Cabarrocas

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann, Père Roca i Cabarrocas

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

2022

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

Christophe Ballif, Anwitaman Datta, Père Roca i Cabarrocas

Heterojunction with intrinsic thin layer or HIT solar cells are considered favorable for large-scale manufacturing of solar modules, as they combine the high efficiency of crystalline silicon (c-Si) solar cells, with the low cost of amorphous silicon techn ...

American Institute of Physics2010

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Anna Fontcuberta i Morral, Sonia Conesa Boj, Libo Yu, Père Roca i Cabarrocas

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire g ...

2010

Defect Formation in Ga-Catalyzed Silicon Nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj, Li Wei, Père Roca i Cabarrocas

The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmi ...

American Chemical Society2010

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj, Libo Yu, Père Roca i Cabarrocas

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalys ...

Institute of Physics2009

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Anna Fontcuberta i Morral, Père Roca i Cabarrocas

The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire < 111 > growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of b ...

American Institute of Physics2008