Publications de Chao Liu | EPFL Graph Search

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Alessandro Floriduz, Reza Soleiman Zadeh Ardebili

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

Institute of Electrical and Electronics Engineers2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu, Reza Soleiman Zadeh Ardebili

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Quantitative volume-based morphometry in focal cortical dysplasia: A pilot study for lesion localization at the individual level

Bénédicte Marie Maréchal, Thomas Yu, Chao Liu, Nan Chen

2018

GaN-on-Si Quasi-Vertical Power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...

Institute of Electrical and Electronics Engineers2018

645 V quasi-vertical GaN power transistors on silicon substrates

Elison de Nazareth Matioli, Chao Liu, Riyaz Mohammed Abdul Khadar

In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 pm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 ...

2018

820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu, Kai Cheng

Institute of Electrical and Electronics Engineers2018

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Elison de Nazareth Matioli, Chao Liu, Riyaz Mohammed Abdul Khadar

Institute of Electrical and Electronics Engineers2018

Sloan Digital Sky Survey IV: Mapping the Milky Way, Nearby Galaxies, and the Distant Universe

Jean-Paul Richard Kneib, Anand Stéphane Raichoor, Timothée Guy Olivier Delubac, Zheng Zheng, Johan Comparat, David Schlegel, John Wilson, Chao Liu, Yuting Wang, Amy Jones

We describe the Sloan Digital Sky Survey IV (SDSS-IV), a project encompassing three major spectroscopic programs. The Apache Point Observatory Galactic Evolution Experiment 2 (APOGEE-2) is observing hundreds of thousands of Milky Way stars at high resoluti ...

2017

The 13th Data Release of the Sloan Digital Sky Survey: First Spectroscopic Data from the SDSS-IV Survey Mapping Nearby Galaxies at Apache Point Observatory

Jean-Paul Richard Kneib, Anand Stéphane Raichoor, Zheng Zheng, Timothée Guy Olivier Delubac, Michael James Henry Smith, Yang Gao, Cheng Zhao, Johan Comparat, David Schlegel, John Wilson

The fourth generation of the Sloan Digital Sky Survey (SDSS-IV) began observations in 2014 July. It pursues three core programs: the Apache Point Observatory Galactic Evolution Experiment 2 (APOGEE-2), Mapping Nearby Galaxies at APO (MaNGA), and the Extend ...

Iop Publishing Ltd2017