Publications de Francesco Gramuglia

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Edoardo Charbon, Pouyan Keshavarzian, Jiuxuan Zhao, Francesco Gramuglia, Myung Jae Lee

Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene in the presence of overwhelming ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Single-Photon Avalanche Diode for Scalable Particle Detection

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Ming-Lo Wu, Ekin Kizilkan, Francesco Gramuglia

Single-photon avalanche diodes (SPADs), also referred to as Geiger-mode avalanche photodiodes, are primarily utilized in photon detection and counting. In this work, we present a measurement of the time-of-flight of minimum ionizing particles with outstand ...

IEEE2023

A 3.3-Gb/s SPAD-Based Quantum Random Number Generator

Edoardo Charbon, Pouyan Keshavarzian, Francesco Gramuglia, Mario Stipcevic

Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit in or ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Ming-Lo Wu, Francesco Gramuglia, Carlo Alberto Fenoglio

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

FRONTIERS MEDIA SA2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Ming-Lo Wu, Francesco Gramuglia, Myung Jae Lee

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

Edoardo Charbon, Emanuele Ripiccini, Ming-Lo Wu, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Kazuhiro Morimoto, Carlo Alberto Fenoglio

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is ...

MDPI2022

On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Edoardo Charbon, Pouyan Keshavarzian, Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Myung Jae Lee

We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 x 16 single-photon avalanche diodes (SPADs) and measures 0.29 x 0.32 mm(2). Each SPAD cell is passively quenched by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022