Publications de Ekin Kizilkan | EPFL Graph Search

Teaching single-photon detection metrology with off-the-shelf CMOS SPAD detectors

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca

The fabrication of the first CMOS single-photon avalanche diodes (SPADs) back in 2003 paved the way to a range of photodetection applications based on single-photon detection, photon counting, and photon time-stamping. In turn, it has become more and more ...

SPIE2025

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Ekin Kizilkan

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the ...

Nature Research2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee

In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Double multiplication region configuration for near-infrared sensitivity enhancement in silicon cmos single-photon avalanche diodes

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca

A near-infrared sensitivity enhanced substrate non-isolated silicon single-photon avalanche diode is disclosed, comprising a p-well layer (101), a high-voltage n-well (102), the p-well layer and the high- voltage n-well layer positioned against each other ...

2024

Extended Temperature Modeling of InGaAs/InP SPADs

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match we ...

IEEE2023

Single-Photon Avalanche Diode for Scalable Particle Detection

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Ming-Lo Wu, Ekin Kizilkan, Francesco Gramuglia

Single-photon avalanche diodes (SPADs), also referred to as Geiger-mode avalanche photodiodes, are primarily utilized in photon detection and counting. In this work, we present a measurement of the time-of-flight of minimum ionizing particles with outstand ...

IEEE2023

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022