Publications de Hung-Chi Han | EPFL Graph Search

Self-heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Edoardo Charbon, Christian Enz, Hung-Chi Han

Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Cryogenic sEKV Compact Model Applied to 22 NM FDSOI Enabling Low-Temperature Circuit Simulation

Edoardo Charbon, Christian Enz, Hung-Chi Han

IEEE2025

Cryogenic Circuit Performance Prediction Using Design-Oriented Model (SEKV) On 22nm FDSOI

Edoardo Charbon, Christian Enz, Hung-Chi Han

IEEE2025

Scaled-Footprint Ultra-Low Power Cryogenic InGaAs/InP HEMTs with Record-High Combination of Low-Noise and High-Frequency Performance

Edoardo Charbon, Kirsten Emilie Moselund, Hung-Chi Han

In this work we demonstrate cryogenic InxGa1-xAs/InP HEMTs with highly scaled gate footprints, down to 380 × 40 nm2 for a single gate finger, and investigate the impact of footprint scaling on device performance. The 80% In channel devices show fT=622 GHz ...

Institute of Electrical and Electronics Engineers Inc.2025

Modeling of the MOSFET for the Design of Cryo-CMOS Circuits

Edoardo Charbon, Christian Enz, Hung-Chi Han

This paper highlights some of the challenges faced in the modeling of MOSFET devices operating at cryogenic temperature (CT). It will review the most important phenomena, including the saturation of the subthreshold swing (S S) below a critical temperature ...

IEEE Computer Society2024

Cryogenic InGaAs HEMTs with Record-Low On-Resistance using Optimized Channel Structure

Edoardo Charbon, Hung-Chi Han

We present cryogenic InGaAs HEMTs showing record-low on-resistance and noise characteristics for low-power qubit readout. Our analysis focuses on transistors with different indium channel compositions, 70%, 75%, and 80%, to explain its impact on cryogenic ...

Institute of Electrical and Electronics Engineers Inc.2024

Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

Christian Enz, Andreas Peter Burg, Catherine Dehollain, Hung-Chi Han

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the p ...

2024

Cryogenic Characterization and Modeling of Advanced MOSFET Technologies for Large-scale Quantum Computing

Hung-Chi Han

With the rapid advancement of quantum computing, there is a growing demand for reliable quantum devices operating at cryogenic temperatures to achieve fault-tolerant systems. Cryo-CMOS has recently gained much attention as the key solution to manipulating ...

EPFL2024

A Comprehensive Output Conductance Model Valid in All Regions of Inversion

Christian Enz, Hung-Chi Han

The output conductance and transconductance are key small-signal parameters that typically set the dc gain of amplifiers. Although the transconductance can be modelled simply and accurately, modeling the output conductance over a large range of bias and ge ...

IEEE2024

Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology

Edoardo Charbon, Christian Enz, Hung-Chi Han

The transistor compact model is crucial but has yet to mature for cryogenic electronics. This paper presents a sophisticated analytical model of the MOSFET subthreshold current at cryogenic temperatures, accounting for the thermionic, hopping, source-to-dr ...

Institute of Electrical and Electronics Engineers2024