Combined Al-protection and HF-vapour release process for ultrathin cantilevers
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A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located on the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
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The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
We describe a new O-ring setup for wet-etching processes of microelectromechanical systems (MEMS) . Our new low-cost approach using siloxane-based seal rings entails the single-side etching of silicon and silicon dioxide using potassium hydroxide and buffe ...
Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective u ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located an the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
