Combined Al-protection and HF-vapour release process for ultrathin cantilevers
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We have designed and realised a new type of microsystem for the electrical characterisation of arrays of living cells for biomedical diagnostic purposes. We have used deep plasma etching for the fabrication of microholes and micro-fluidic channels in silic ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located on the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located an the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
We describe a new O-ring setup for wet-etching processes of microelectromechanical systems (MEMS) . Our new low-cost approach using siloxane-based seal rings entails the single-side etching of silicon and silicon dioxide using potassium hydroxide and buffe ...
We present powder blasting as a new technology for the realization of Micro Electro-Mechanical Systems (MEMS). The technique is base don the erosion of a masked substrate by a high velocity powder beam. We study the erosion rate of the process using glass ...
We report on recent advances in micro fabrication technology using micromolding and high aspect ratio structuring of photopolymer. The direct application is the realization of components for millimeter-size, ultrasonic piezoelectric motors. A new fabricati ...
We report about a new process we have developed to fabricate miniaturized double layer octupoles that can be operated as electrostatic scanner/stigmators for charged particle beams. The fabrication process is based on deep reactive ion etching (DRIE) and a ...
Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective u ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...
The low frequency noise of lattice-matched InP-based HEMTs gate recess etched with CH4/H2 RIE and phosphoric-acid based wet etchants was studied at different gate and drain biases in a temperature range of 77 K to 340 K. The measurements showed a significa ...