A transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain. The introduction of the transistor is often considered one of the most important inventions in history.
Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET).
The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. John Bardeen, Walter Brattain and William Shockley invented the first working transistors at Bell Labs, the point-contact transistor in 1947. Shockley introduced the improved bipolar junction transistor in 1948, which entered production in the early 1950s and led to the first widespread use of transistors.
The MOSFET (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor, was invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959. MOSFETs use even less power, which led to the mass-production of MOS transistors for a wide range of uses. The MOSFET has since become the most widely manufactured device in history.
The first patent for the field-effect transistor principle was filed in Canada by Austrian-Hungarian physicist Julius Edgar Lilienfeld on October 22, 1925, but Lilienfeld published no research articles about his devices, and his work was ignored by industry.
Cette page est générée automatiquement et peut contenir des informations qui ne sont pas correctes, complètes, à jour ou pertinentes par rapport à votre recherche. Il en va de même pour toutes les autres pages de ce site. Veillez à vérifier les informations auprès des sources officielles de l'EPFL.
Un transistor à effet de champ (en anglais, Field-effect transistor ou FET) est un dispositif semi-conducteur de la famille des transistors. Sa particularité est d'utiliser un champ électrique pour contrôler la forme et donc la conductivité d'un « canal » dans un matériau semiconducteur. Il concurrence le transistor bipolaire dans de nombreux domaines d'applications, tels que l'électronique numérique. Le premier brevet sur le transistor à effet de champ a été déposé en 1925 par Julius E. Lilienfeld.
The electronics industry is the economic sector that produces electronic devices. It emerged in the 20th century and is today one of the largest global industries. Contemporary society uses a vast array of electronic devices built-in automated or semi-automated factories operated by the industry. Products are primarily assembled from metal–oxide–semiconductor (MOS) transistors and integrated circuits, the latter principally by photolithography and often on printed circuit boards.
vignette|alt=Arcs électriques dans un ciel bleu allant des nuages au sol.|La foudre est l'un des phénomènes électriques les plus impressionnants qui existent. L’électricité est l'ensemble des phénomènes physiques associés à la présence et au mouvement de la matière qui possède une propriété de charge électrique. L'électricité est liée au magnétisme, les deux faisant partie du phénomène de l'électromagnétisme, tel que décrit par les équations de Maxwell.
Ce cours couvre les fondements des systèmes numériques. Sur la base d'algèbre Booléenne et de circuitscombinatoires et séquentiels incluant les machines d'états finis, les methodes d'analyse et de syn
Neural interfaces (NI) are bioelectronic systems that interface the nervous system to digital technologies. This course presents their main building blocks (transducers, instrumentation & communicatio
Explique le fonctionnement du transistor MOS dans les régions de triode et de saturation, en mettant l'accent sur la transconductivité et la disposition.
Explore le bruit thermique dans les transistors MOS, le bruit d'entrée des transistors bipolaires et le bruit dans les étages amplificateurs, les miroirs, les paires différentielles et les opamps.
The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...
In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...
EPFL2024
,
The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...