Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells
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Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
Femtosecond luminescence measurements combined with pump-probe experiments using selective excitation of either free carriers or excitons have been performed. The time-resolved luminescence spectra show a striking disparity compared with recently published ...
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
The role of Coulomb scattering is studied in the coherent transients of strongly driven exciton resonances in semiconductor quantum wells. Coulomb scattering is treated within the second Born approximation and the light-induced dressing of the electron-hol ...
Wide quantum wells, where the energy spacing between the first two energy levels is lower than the energy of the polar optical phonon, could represent the ideal condition to obtain a population inversion and the production of infrared lasers. On the other ...
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At ...
A study of the elastic exciton-exciton Coulomb scattering in a semiconductor quantum well is presented, including the interexciton exchange of carriers and the spin degrees of freedom. The theoretical results show that electron-electron and hole-hole excha ...
Ultrafast pump-probe measurements evidence the dynamical Stark splitting in the exciton absorption spectrum of a single semiconductor quantum well. The intensity of the Stark sidebands in the spectrum is comparable to the linear absorption and their separa ...