Optical Amplification and Its Saturation in Semiconductor Quantum-Wells
Publications associées (52)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Results are presented of both linear optical transmission and femtosecond four-wave mixing measurements, on a II-VI semiconductor microcavity into which three quantum wells have been inserted. The excitons (Xs) confined in the wells are strongly coupled to ...
We report transient sub-picosecond pump and probe experiments performed on a semiconductor microcavity into which quantum wells have been inserted. The cavity is featuring resonance and strong coupling with the exciton. It is strongly and resonantly excite ...
We use a rate equation model in order to reproduce the dynamics of two-dimensional excitons and free carriers in a time resolved photoluminescence experiment. We investigate the dynamics of the exciton formation from free electron-hole pairs, and the evolu ...
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At ...
The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied ...
Using luminescence upconversion with 100 fs resolution, we have investigated the intersubband scattering of electrons in GaAs quantum wells (QWs). The energy separations between the first and second confined electron subband (E(12)) were more or less than ...
A study of the elastic exciton-exciton Coulomb scattering in a semiconductor quantum well is presented, including the interexciton exchange of carriers and the spin degrees of freedom. The theoretical results show that electron-electron and hole-hole excha ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...