Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phono ...
We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
Recently Zachau, Kash, and Masselink [Phys. Rev. B 44, 4048 (1991)] determined hole-subband dispersions in quantum wells experimentally with the use of hot-electron-acceptor luminescence. We present here results of multiple-band calculations, which are in ...
We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/Al0.3Ga0.7As superlattices (SL's) having randomly distributed well widths are studied. Our results indicate that the electronic properties of disordered SL' ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...
Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike stat ...
