Carrier-carrier interaction and fast intersubband scattering in wide GaAs quantum wells
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We propose methods for reducing the energy consumed by snoop requests in snoopy bus-based symmetric multiprocessor (SMP) systems. Observing that a large fraction of snoops do not find copies in many of the other caches, we introduce JETTY, a small, cache-l ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the e ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...
We present second-harmonic generation experiments in p-doped asymmetrically stepped quantum wells using the emission of a free-electron laser in the wavelength interval between 13 and 18 mu m. The wells are designed such that the three fewest valence-subba ...
A new series of iridium(III) mixed ligand complexes TBA[Ir(ppy)2(CN)2] (1), TBA[Ir(ppy)2(NCS)2] (2), TBA[Ir(ppy)2(NCO)2] (3), and [Ir(ppy)2(acac) (4) (ppy = 2-phenylpyridine; acac ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing be tween the first two electron subbands is smaller than the LO phono ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...
The optical gain spectra of strongly excited multiple GaAs-(Ga,Al)As quantum wells have been determined using the variable stripe length method. The gain spectra are obtained by analysing the dependence of the amplified luminescence intensities on stripe l ...