Site- and energy-controlled pyramidal quantum dot heterostructures
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We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission ...
We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...
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We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
Thermally detected optical absorption measurements have been performed at liquid helium temperature in order to study the effects of In segregation on the optical properties of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy under various gro ...
The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)(4)(GaAs)(8) superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution ...
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Transmission spectra of ordered and disordered GaAs/Al0.3Ga0.7As superlattices (SL) were measured at 2 K. The experimental results are compared with numerical simulations obtained by means of a transfer matrix method. The numerical results indicate that a ...
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